| Ident. | Authors (with country if any) | Title |
|---|
| 001873 |
| Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers |
| 001898 |
| Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
| 001A92 |
| Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells |
| 001B08 |
| Strong green luminescence in quaternary InAlGaN thin films |
| 001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001F91 |
| Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
