Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Y. W. Zhao And NotIonization potential

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001224 Annihilation of deep level defects in InP through high temperature annealing
001644 Electron irradiation-induced defects in InP pre-annealed at high temperature
001A42 Annealing ambient controlled deep defect formation in InP
001C69 Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
001D45 Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
002134 Carrier mobility distribution in annealed undoped LEC InP material
002296 Positron-lifetime study of compensation defects in undoped semi-insulating InP
002326 Formation of PIn defect in annealed liquid-encapsulated Czochralski InP

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024