| Ident. | Authors (with country if any) | Title |
|---|
| 001112 |
| Influence of mechanical agitation on ZnSe electrodeposition in H2SeO3-ZnSO4 aqueous solution |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001370 |
| Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium |
| 001501 |
| Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures |
| 001703 |
| Thermal annealing of InN films grown by metal-organic chemical vapor deposition |
| 001865 |
| A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density |
| 001915 |
| Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] |
| 001B37 |
| Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures |
| 001B71 |
| Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures |
| 001C20 |
| Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures |
