| Ident. | Authors (with country if any) | Title |
|---|
| 000763 |
| Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots |
| 000A51 |
| SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY |
| 000A93 |
| Magnetoresistance in a nominally undoped InGaN thin film |
| 001250 |
| Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well |
| 001318 |
| Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well |
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001709 |
| The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE |
| 001A42 |
| Annealing ambient controlled deep defect formation in InP |
| 001B13 |
| Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C88 |
| Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements |
| 001E29 |
| Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates |
| 001E37 |
| Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
| 002235 |
| Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots |
| 002379 |
| New method for the growth of highly uniform quantum dots |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002507 |
| Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice |
| 002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
| 002526 |
| Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE |
| 002605 |
| Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice |
