| Ident. | Authors (with country if any) | Title |
|---|
| 000360 |
| Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials |
| 000382 |
| Tailoring martensitic transformation and martensite structure of NiMnIn alloy by Ga doping In |
| 000E75 |
| Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers |
| 000F77 |
| 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration |
| 001043 |
| Self-pulsation in a two-section DFB laser with a varied ridge width |
| 001800 |
| In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy |
| 001921 |
| Tunneling characteristics of octadecyl derivatives on tin and indium electrodes |
| 001A05 |
| High-power vertical cavity surface emitting laser with good performances |
| 001A54 |
| InN island shape and its dependence on growth condition of molecular-beam epitaxy |
| 001A66 |
| Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy |
| 001D51 |
| Numerical simulation of macrosegregation of indium phase in rapidly solidified Al-In hypermonotectic sheets |
| 002381 |
| Microcavity effect and InGaAs/InGaAsP MQW microdisk laser |
| 002386 |
| Linewidth in microdisk laser |
| 002388 |
| Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers |
| 002595 |
| Preparation of nanocrystalline indium powders by use of γ-ray radiation |
