Ident. | Authors (with country if any) | Title |
---|
000274 |
| Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors |
000330 |
| Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K |
000619 |
| Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well |
000D67 |
| Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE |
000D81 |
| Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures |
000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |