| Ident. | Authors (with country if any) | Title |
|---|
| 001331 |
| Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition |
| 001897 |
| Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells |
| 001910 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers |
| 001A74 |
| Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells |
| 001B05 |
| Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys |
| 001C68 |
| Degree of ordering in Al0.5In0.5P by Raman scattering |
| 001C81 |
| Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP |
| 001C97 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys |
| 001D02 |
| Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x |
| 001E71 |
| Persistent photoconductivity in InGaN/GaN multiquantum wells |
| 001F95 |
| Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well |
| 002010 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002157 |
| Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well |
| 002159 |
| Persistent photoconductivity in InGaP/GaAs heterostructures |
| 002167 |
| Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002203 |
| Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002309 |
| Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes |
| 002335 |
| Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy |
| 002336 |
| Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence |
| 002472 |
| Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure |
| 002541 |
| Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder |
| 002555 |
| Effective mass of two-dimensional electron gas in δ-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells |
| 002563 |
| Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP |
| 002574 |
| Observation of double cyclotron resonance in modulation-δ-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection |
| 002640 |
| Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance |
| 002644 |
| Observation of spin-splitting crossing between subbands in the optically detected cyclotron-resonance spectra of In0.53Ga0.47As/In0.52Al0.48As heterojunctions |
| 002661 |
| Cyclotron-resonance studies in relaxed InxGa1-xAs (0≤x≤1) epilayers |
| 002666 |
| Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance |
| 002686 |
| Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates |
| 002755 |
| Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates |
