| Ident. | Authors (with country if any) | Title |
|---|
| 000456 |
| One-step synthesis of Cu(In,Ga)Se2 absorber layers by magnetron sputtering from a single quaternary target |
| 001747 |
| Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001930 |
| The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates |
| 001977 |
| Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers |
| 001A27 |
| Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001B51 |
| Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
| 001F19 |
| Organic negative-resistance devices using PPV containing electron-transporting groups on the main chain |
