| Ident. | Authors (with country if any) | Title |
|---|
| 001A62 |
| Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base |
| 001D05 |
| Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer |
| 001E75 |
| An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel |
| 001F96 |
| High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor |
| 002443 |
| Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions |
| 002467 |
| Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure |
| 002649 |
| Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure |
| 002673 |
| Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure |
| 002674 |
| Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch |
