| Ident. | Authors (with country if any) | Title |
|---|
| 002548 |
| Photoluminescence studies of InGaAs/InAlAs strained double quantum wells |
| 002560 |
| Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy |
| 002581 |
| Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures |
| 002597 |
| Photoluminescence studies of CuInSe2 |
| 002602 |
| Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002629 |
| Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002632 |
| Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002704 |
| Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002776 |
| optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002796 |
| Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells |
