Ident. | Authors (with country if any) | Title |
---|
002548 |
| Photoluminescence studies of InGaAs/InAlAs strained double quantum wells |
002560 |
| Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy |
002597 |
| Photoluminescence studies of CuInSe2 |
002604 |
| Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells |
002632 |
| Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
002776 |
| optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures |
002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
002796 |
| Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells |