| Ident. | Authors (with country if any) | Title |
|---|
| 000351 |
| Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows |
| 000381 |
| Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment |
| 000997 |
| The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy |
| 000B24 |
| InN layers grown by MOCVD on SrTi03 substrates |
| 000C37 |
| A study of indium incorporation in In-rich InGaN grown by MOVPE |
| 001473 |
| Charge tunneling and cross recombination at organic heterojunction under electric fields |
| 001678 |
| Charge carriers bulk recombination instead of electroplex emission after their tunneling through hole-blocking layer in OLEDs |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
