| Ident. | Authors (with country if any) | Title |
|---|
| 000730 |
| Quantum dot lasers grown by gas source molecular-beam epitaxy |
| 000B26 |
| InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy |
| 001735 |
| Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm |
| 001977 |
| Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers |
| 001B51 |
| Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
| 001F59 |
| Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 002035 |
| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots |
| 002057 |
| Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution |
| 002081 |
| Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots |
| 002109 |
| Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy |
| 002146 |
| 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition |
| 002410 |
| Evidence of multimodal patterns of self-organized quantum dots |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002424 |
| Annealing behavior of InAs/GaAs quantum dot structures |
