| Ident. | Authors (with country if any) | Title |
|---|
| 000165 |
| Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface |
| 000520 |
| Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells |
| 000864 |
| Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates |
| 000B75 |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films |
| 000D91 |
| Observation of the surface circular photogalvanic effect in InN films |
| 001211 |
| Circular photogalvanic effect at inter-band excitation in InN |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001370 |
| Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium |
| 001501 |
| Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures |
| 001513 |
| Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure |
| 001749 |
| Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells |
| 001915 |
| Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] |
| 001B37 |
| Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures |
| 001B71 |
| Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures |
| 001C20 |
| Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures |
| 001C26 |
| Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer |
