| Ident. | Authors (with country if any) | Title |
|---|
| 000108 |
| Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing |
| 000192 |
| Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors |
| 000205 |
| Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors |
| 000804 |
| Influences of channel metallic composition on indium zinc oxide thin-film transistor performance |
| 000930 |
| Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition |
| 000954 |
| Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers |
| 000F56 |
| Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target |
| 000F90 |
| Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region |
| 001415 |
| Energy band alignment of an In2O3: Mo/Si heterostructure |
| 001506 |
| Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature |
| 001708 |
| The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target |
