| Ident. | Authors (with country if any) | Title |
|---|
| 000066 |
| Transparent Junctionless Thin-Film Transistors With Tunable Operation Mode |
| 000067 |
| Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte |
| 000094 |
| Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates |
| 000114 |
| Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors |
| 000248 |
| Flexible Transparent Junctionless TFTs With Oxygen-Tuned Indium-Zinc-Oxide Channels |
| 000249 |
| Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates |
| 000362 |
| Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing |
| 000475 |
| Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask |
| 000482 |
| Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates |
| 000655 |
| Ultralow-Voltage Transparent In2O3 Nanowire Electric-Double-Layer Transistors |
| 000721 |
| Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by SiO2-Based Solid Electrolyte |
| 000786 |
| Low-Voltage Transparent Indium-Zinc-Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors |
| 000787 |
| Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors |
| 000788 |
| Low-Voltage Electric-Double-Layer TFTs on SiO2-Covered Paper Substrates |
| 000944 |
| Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium-Zinc-Oxide Electric-Double-Layer TFTs |
| 000979 |
| Vertical Oxide Homojunction TFTs of 0.8 V Gated by H3PO4-Treated Si02 Nanogranular Dielectric |
| 000A83 |
| One-Shadow-Mask Self-Assembled Ultralow-Voltage Coplanar Homojunction Thin-Film Transistors |
| 000B19 |
| Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor |
| 000B65 |
| Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers |
