| Ident. | Authors (with country if any) | Title |
|---|
| 000909 |
| Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis |
| 001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B53 |
| Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates |
| 001C17 |
| Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
| 002380 |
| Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy |
