| Ident. | Authors (with country if any) | Title |
|---|
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000378 |
| Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser |
| 000730 |
| Quantum dot lasers grown by gas source molecular-beam epitaxy |
| 000B26 |
| InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy |
| 000E48 |
| Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy |
| 001351 |
| Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002265 |
| Indium composition dependence of size uniformity of InGaAs quantum dots on (311)B GaAs grown by means of molecular beam epitaxy |
| 002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
