Ident. | Authors (with country if any) | Title |
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001A71 |
| Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature |
001B97 |
| High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers |
001E74 |
| Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor |
002649 |
| Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure |
002673 |
| Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure |
002674 |
| Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch |