Ident. | Authors (with country if any) | Title |
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001943 |
| Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers |
001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
001A06 |
| High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE |
001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
001B92 |
| Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer |