| Ident. | Authors (with country if any) | Title |
|---|
| 001214 |
| Characterization of a-plane InN film grown on r-plane sapphire by MOCVD |
| 001300 |
| Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition |
| 001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001A99 |
| Characteristics of a field-effect transistor with stacked InAs quantum dots |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B53 |
| Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates |
| 001C17 |
| Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
| 002544 |
| High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells |
| 002886 |
| Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction |
