| Ident. | Authors (with country if any) | Title |
|---|
| 001B99 |
| Growth of nanoscale InGaN self-assembled quantum dots |
| 002014 |
| Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002039 |
| Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes |
| 002164 |
| Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells |
| 002173 |
| Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature |
| 002195 |
| Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well |
| 002827 |
| Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes |
