| Ident. | Authors (with country if any) | Title |
|---|
| 001483 |
| As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets |
| 001F95 |
| Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well |
| 002159 |
| Persistent photoconductivity in InGaP/GaAs heterostructures |
| 002167 |
| Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002203 |
| Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002298 |
| Photoconductivity in self-organized InAs quantum dots |
| 002336 |
| Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002541 |
| Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder |
| 002563 |
| Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP |
| 002640 |
| Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance |
