| Ident. | Authors (with country if any) | Title |
|---|
| 001345 |
| Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching |
| 001556 |
| Selective separation of In(III), Ga(III), and Zn(II) from dilute solution using solvent-impregnated resin containing Di(2-ethylhexyl) phosphoric acid |
| 001632 |
| Extraction and separation of In(III), Ga(III) and Zn(II) from sulfate solution using extraction resin |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001997 |
| InGaN/GaN multi-quantum dot light-emitting diodes |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B53 |
| Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates |
| 001C17 |
| Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
