| Ident. | Authors (with country if any) | Title |
|---|
| 000560 |
| Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes |
| 001262 |
| The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED |
| 001947 |
| Study of photoluminescence and absorption in phase-separation InGaN films |
| 001971 |
| Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off |
| 001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
| 001B89 |
| InGaN/GaN MQW high brightness LED grown by MOCVD |
| 002114 |
| Elastic strain in InGaN and AlGaN layers |
| 002284 |
| Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode |
| 002406 |
| Growth and doping characteristics of InGaN films grown by low pressure MOCVD |
