Ident. | Authors (with country if any) | Title |
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000581 |
| Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition |
000600 |
| Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) |
000B11 |
| Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties |
000C23 |
| Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer |
000C82 |
| The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers |
000C83 |
| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD |
000E16 |
| Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition |
001065 |
| Photoelectric characteristics of metal/InGaN/GaN heterojunction structure |
001110 |
| Investigation on the structural origin of n-type conductivity in InN films |
001216 |
| Cathodoluminescence study of GaN-based film structures |
001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |