| Ident. | Authors (with country if any) | Title |
|---|
| 000581 |
| Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition |
| 000600 |
| Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) |
| 000B11 |
| Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties |
| 000C23 |
| Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer |
| 000C82 |
| The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers |
| 000C83 |
| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD |
| 000D17 |
| Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films |
| 000E16 |
| Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition |
| 001065 |
| Photoelectric characteristics of metal/InGaN/GaN heterojunction structure |
| 001110 |
| Investigation on the structural origin of n-type conductivity in InN films |
| 001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |
