| Ident. | Authors (with country if any) | Title |
|---|
| 000576 |
| Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition |
| 000703 |
| Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation |
| 000A05 |
| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density |
| 000B16 |
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| 001061 |
| Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector |
| 001603 |
| Influence of dislocation stress field on distribution of quantum dots |
| 001853 |
| Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition |
| 001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
| 002055 |
| The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates |
| 002065 |
| Strain-compensated quantum cascade lasers operating at room temperature |
| 002098 |
| High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers |
| 002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002238 |
| Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition |
| 002268 |
| In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates |
| 002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
| 002407 |
| Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity |
