Ident. | Authors (with country if any) | Title |
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000576 |
| Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition |
001061 |
| Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector |
001603 |
| Influence of dislocation stress field on distribution of quantum dots |
001853 |
| Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition |
001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
002055 |
| The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates |
002065 |
| Strain-compensated quantum cascade lasers operating at room temperature |
002098 |
| High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers |
002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
002234 |
| Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates |
002238 |
| Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition |
002268 |
| In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates |
002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
002407 |
| Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity |