| Ident. | Authors (with country if any) | Title |
|---|
| 001D62 |
| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots |
| 001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
| 002048 |
| Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002063 |
| Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
