| Ident. | Authors (with country if any) | Title |
|---|
| 000012 |
| Strain induced composition profile in InGaN/GaN core-shell nanowires |
| 000053 |
| Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals |
| 000124 |
| Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors |
| 000146 |
| Plasmon-enhanced organic solar cells with solution-processed three-dimensional Ag nanosheets |
| 000162 |
| Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples |
| 000215 |
| InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit |
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000314 |
| Chemical vapor deposition of graphene on liquid metal catalysts |
| 000396 |
| Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction |
| 000441 |
| Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films |
| 000513 |
| High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions |
| 000603 |
| Colorful InAs Nanowire Arrays: From Strong to Weak Absorption with Geometrical Tuning |
| 000620 |
| Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device |
| 000653 |
| Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique |
| 000807 |
| Influence of side chains on electrochromic properties of green donor-acceptor-donor polymers |
| 000813 |
| InP Lateral Overgrowth Technology for Silicon Photonics |
| 000906 |
| Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell |
| 000972 |
| 100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module |
| 000A84 |
| Observation of spin-dependent quantum jumps via quantum dot resonance fluorescence |
| 000B30 |
| Hyperfine induced intensity redistribution in In II |
| 000B49 |
| First-principles investigation on the phase stability and chemical bonding of mInSb.nInTe phase-change random alloys |
| 000D34 |
| Strain effect in determining the geometric shape of self-assembled quantum dot |
| 000E08 |
| Metamorphic InGaAs telecom lasers on GaAs |
| 000E52 |
| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method |
| 000F35 |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
| 000F88 |
| Ultracompact directional couplers realized in InP by utilizing feature size dépendent etching |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001359 |
| Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm |
| 001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001905 |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 001A58 |
| Enhancement of room-temperature photoluminescence in InAs quantum dots |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001C66 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 001D72 |
| Formation and charge control of a quantum dot by etched trenches and multiple gates |
| 001D98 |
| Application of extracorporeal immunoadsorption to reduce circulating blood radioactivity after intraperitoneal administration of indium-111-HMFG1-biotin |
| 001E16 |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 001E42 |
| Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs |
| 001E45 |
| Etching trenches to effectively create electron quantum wires for single-electron-transistor applications |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 001F76 |
| Active spacecraft potential control for Cluster: implementation and first results |
| 002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
| 002217 |
| Transparent conducting CeO2-SiO2 thin films |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002671 |
| Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
