Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Russie And NotR. M. Bayazitov

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000567 Effects of p-type doping on the optical properties of InAs/GaAs quantum dots
000B07 Langmuir-Blodgett Films of Pyridyldithio-Modified Multiwalled Carbon Nanotubes as a Support to Immobilize Hydrogenase
000F35 Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment
001426 Electrochemical properties of carbon nanotubes-hydrogenase conjugates Langmuir-Blodgett films
001881 Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
001905 Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
001C06 Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses
001C43 An increase of photorefractive sensitivity in In:LiNbO3 crystal
001C66 Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
001C73 Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
001E16 Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
001E47 Nuclear spectroscopy by means of (p,α) reactions on magic and near magic nuclei: 122Sn(p,α)119In
002015 Double-step resistive superconducting transitions of indium and gallium in porous glass
002393 Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
002540 Two-dimensional excitonic emission in InAs submonolayers

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024