| Ident. | Authors (with country if any) | Title |
|---|
| 000567 |
| Effects of p-type doping on the optical properties of InAs/GaAs quantum dots |
| 000B07 |
| Langmuir-Blodgett Films of Pyridyldithio-Modified Multiwalled Carbon Nanotubes as a Support to Immobilize Hydrogenase |
| 000F35 |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
| 001426 |
| Electrochemical properties of carbon nanotubes-hydrogenase conjugates Langmuir-Blodgett films |
| 001905 |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 001C06 |
| Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses |
| 001C43 |
| An increase of photorefractive sensitivity in In:LiNbO3 crystal |
| 001C66 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 001C73 |
| Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound |
| 001E16 |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 001E47 |
| Nuclear spectroscopy by means of (p,α) reactions on magic and near magic nuclei: 122Sn(p,α)119In |
| 002015 |
| Double-step resistive superconducting transitions of indium and gallium in porous glass |
| 002260 |
| Nanosecond laser annealing of zinc-doped indium phosphide |
| 002393 |
| Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux |
| 002540 |
| Two-dimensional excitonic emission in InAs submonolayers |
