| Ident. | Authors (with country if any) | Title |
|---|
| 000304 |
| Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures |
| 000374 |
| The atomic structure of the threefold surface of the icosahedral Ag-In-Yb quasicrystal |
| 000415 |
| Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells |
| 000560 |
| Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes |
| 000864 |
| Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates |
| 000866 |
| Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates |
| 000913 |
| Ease of control and switching between ordered free-standing arrays of ZnO nanotubes and nanorods on conductive transparent substrates |
| 000A84 |
| Observation of spin-dependent quantum jumps via quantum dot resonance fluorescence |
| 000C66 |
| Ultraviolet-illuminated fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics |
| 000D21 |
| Study on temperature dependent resistivity of indium-doped cadmium zinc telluride |
| 000D27 |
| Structure and optical properties of ZnO:V thin films with different doping concentrations |
| 000F59 |
| Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder |
| 000F80 |
| White electrophosphorescent devices based on tricolour emissive layers |
| 001182 |
| Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD) |
| 001693 |
| A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD |
| 001695 |
| 10Gbps zero-chirp compact transmitter with InP MQW mach-zehnder modulator |
| 001757 |
| Porous crystalline iron oxide thin films templated by mesoporous silica |
| 001785 |
| Large-area In2O3 ordered pore arrays and their photoluminescence properties |
| 001852 |
| Applications of ICP in optoelectronic device fabrication |
| 001946 |
| Study of stimulated emission from InGaN/GaN multiple quantum well structures |
| 001A59 |
| Electron-beam-induced current and cathodoluminescence characterization of InGaAs strain-balanced multiquantum well photovoltaic cells |
| 001D59 |
| Interface magnetic properties of epitaxial Fe-InAs heterostructures |
| 001F76 |
| Active spacecraft potential control for Cluster: implementation and first results |
| 002012 |
| Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002254 |
| Photoelectrochemical properties of Langmuir-Blodgett films of two squaraine derivatives |
| 002540 |
| Two-dimensional excitonic emission in InAs submonolayers |
| 002620 |
| Electroluminescence from dysprosium- and neodymium-containing LB films |
| 002662 |
| Band gap of ''completely disordered'' Ga0.52In0.48P |
| 002759 |
| The band gap of ''perfectly disordered'' Ga0.52In0.48P |
