| Ident. | Authors (with country if any) | Title |
|---|
| 000156 |
| Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires |
| 000295 |
| Design and synthesis of indole-substituted fullerene derivatives with different side groups for organic photovoltaic devices |
| 000329 |
| Acid-functionalized fullerenes used as interfacial layer materials in inverted polymer solar cells |
| 000423 |
| Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties |
| 000438 |
| Prediction of the Cu-Ga-In Ternary Phase Diagram |
| 000515 |
| Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range |
| 000618 |
| Application of Single-Crystalline PMN-PT and PIN-PMN-PT in High-Performance Pyroelectric Detectors |
| 000702 |
| Sub-picosecond pulse generation using hybrid silicon and GaInP waveguides |
| 000856 |
| Ferrocene-based novel electrochemical In3+ sensor |
| 000D09 |
| Synthesis and electroluminescent properties of highly efficient anthracene derivatives with bulky side groups |
| 000D82 |
| PHOTOLUMINESCENCE FROM RARE EARTH IONS DOPED NANOCRYSTALS |
| 000E13 |
| Large reversible magnetocaloric effect in Tb2In |
| 001337 |
| Optical, structural, and magnetic properties of p-type InMnP: Zn implanted with the Mn (1 and 10 at.%) |
| 001377 |
| Improved contrast polymer light-emitting diode with optical interference layers |
| 001770 |
| Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy |
| 001B85 |
| Light emitting properties of diheteryl-substituted styryl dyes |
| 002364 |
| Preparation and characterization of indium-doped tin dioxide nanocrystalline powders |
