Ident. | Authors (with country if any) | Title |
---|
000234 |
| Highly efficient two component phosphorescent organic light-emitting diodes based on direct hole injection into dopant and gradient doping |
000284 |
| Effect of in situ annealing on the performance of spray coated polymer solar cells |
000343 |
| A Kinetic Study of Indium Leaching from Indium-Bearing Zinc Ferrite Under Microwave Heating |
000420 |
| Self-assembly of osmium complexes on reduced graphene oxide: A case study toward electrochemical chiral sensing |
000936 |
| Chlorinated indium tin oxide as a charge injecting electrode for admittance spectroscopy |
000937 |
| Chlorinated Indium Tin Oxide Electrodes with High Work Function for Organic Device Compatibility |
000960 |
| A rapid green route for fabricating efficient SERS substrates |
000A58 |
| Quantum dot multi-wavelength comb lasers with Si ring resonator |
000C47 |
| A New Dithienylbenzotriazole-Based Poly(2,7-carbazole) for Efficient Photovoltaics |
000D42 |
| Simulation of a 1550 nm InGaAsP-InP transistor laser |
001016 |
| Synthesis and near-infrared luminescent properties of some ruthenium complexes |
001553 |
| Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects |
001684 |
| Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing |
001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
001A17 |
| Experimental and theoretical studies of the propargyl-allenylindium system |
001C59 |
| Fabrication and structural analysis of Al, Ga, and In nanocluster crystals |
001D60 |
| Interband impact ionization in THz-driven InAs/AlSb heterostructures |
002329 |
| Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells |
002342 |
| Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells |
002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
002578 |
| Alloy composition dependence of photoexcited carrier dynamics in GaxIn1-xP/InP:Fe (x<0.18) |
002669 |
| Sulfide-assisted reordering at the InP surface and SiNx/InP interface |