Ident. | Authors (with country if any) | Title |
---|
000029 |
| Fabrication of In2O3@In2S3 core-shell nanocubes for enhanced photoelectrochemical performance |
000156 |
| Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires |
000159 |
| Organic photovoltaic modules fabricated by an industrial gravure printing proofer |
000254 |
| Ferromagnetism in Cr doped In2O3 |
000259 |
| Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate |
000382 |
| Tailoring martensitic transformation and martensite structure of NiMnIn alloy by Ga doping In |
000413 |
| Simplifying the Evaluation of Graphene Modified Electrode Performance Using Rotating Disk Electrode Voltammetry |
000434 |
| Properties of different temperature annealed Cu(In,Ga)Se2 and Cu(In,Ga)2Se3.5 films prepared by RF sputtering |
000578 |
| Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films |
000741 |
| Preparation and electrochemical properties of gold nanoparticles containing carbon nanotubes-polyelectrolyte multilayer thin films |
000767 |
| Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer |
000800 |
| Investigation on Indium-Filled Skutterudite Materials Prepared by Combining Hydrothermal Synthesis and Hot Pressing |
000883 |
| Electrochemistry and biosensing activity of cytochrome c immobilized in macroporous materials |
000929 |
| Correlation between microstructure and property of electroless deposited Pt counter electrodes on plastic substrate for dye-sensitized solar cells |
000A71 |
| Photoelectrochemical Characterization of a Robust TiO2/BDD Heterojunction Electrode for Sensing Application in Aqueous Solutions |
000A87 |
| Multilayered films of cobalt oxyhydroxide nanowires/manganese oxide nanosheets for electrochemical capacitor |
000D47 |
| Reversible hydrogen storage in titanium-catalyzed LiAlH4-LiBH4 system |
000F58 |
| Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation |
000F89 |
| Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems |
001114 |
| Influence of EDTA concentration on the structure and properties of SnS films prepared by electro-deposition |
001160 |
| Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems |
001164 |
| Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots |
001256 |
| Two-colour mid-infrared absorption in an InAs/GaSb-based type II and broken-gap quantum well |
001260 |
| The state filling effect in p-doped InGaAs/GaAs quantum dots |
001291 |
| Sub-terahertz photoconduction induced by interlayer transition in an InAs/GaSb-based type II and broken-gap quantum well system |
001298 |
| Structural studies of SnS films prepared by thermal evaporation |
001549 |
| Spin-splitting enhanced by many-body effects in a two-dimensional electron gas in the presence of the Rashba spin-orbit interaction |
001661 |
| Donor bound excitons in wurtzite InGaN quantum dots : Effects of built-in electric fields |
001745 |
| Screening length and quantum and transport mobilities of a heterojunction in the presence of the Rashba effect |
001752 |
| Preparation of monodispersed tin-doped indium oxide powders by hydrothermal method |
001965 |
| Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells |
001994 |
| Influence of minute amount of elements Bi, Ag and In on surface tension and soldering process performance of tin-lead based solders |
001A76 |
| Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction |
001B89 |
| InGaN/GaN MQW high brightness LED grown by MOCVD |
002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
002074 |
| Quantum size effects in metal-induced Si(111) surface reconstructions |
002392 |
| In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers |
002761 |
| The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures |