| Ident. | Authors (with country if any) | Title |
|---|
| 000032 |
| Enhanced efficiency and stability of polymer solar cells with TiO2 nanoparticles buffer layer |
| 000054 |
| Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope |
| 000064 |
| Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition |
| 000079 |
| The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance |
| 000080 |
| The effect of secondary electrons on emission |
| 000105 |
| Stability of an H2-producing photocatalyst (Ru/(CuAg)0.15In0.3Zn1.4S2) in aqueous solution under visible light irradiation |
| 000116 |
| Seed-mediated direct growth of CdSe nanoclusters on substrates |
| 000143 |
| Polarized Raman study on phase transitions in 0.24Pb(In1/2Nb1/2)O3-0.43Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 single crystal |
| 000190 |
| Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method |
| 000212 |
| Incorporating CuInS2 quantum dots into polymer/oxide-nanoarray system for efficient hybrid solar cells |
| 000232 |
| Highly luminescent water-soluble quaternary Zn-Ag-In-S quantum dots for tumor cell-targeted imaging |
| 000235 |
| Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates |
| 000241 |
| Growth of vertically aligned ZnO nanowalls for inverted polymer solar cells |
| 000270 |
| Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors |
| 000271 |
| Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer |
| 000291 |
| Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires |
| 000292 |
| Dopant-induced band filling and bandgap renormalization in CdO: In films |
| 000294 |
| Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents |
| 000309 |
| Complete matrix properties of [001]c and [011]c poled 0.33Pb(In1/2Nb1/2)O3-0.38Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals |
| 000312 |
| Chemically stable and easily sintered high-temperature proton conductor BaZr0.8In0.2O3-δ for solid oxide fuel cells |
| 000342 |
| A mixed-conducting BaPr0.8In0.2O3-δ cathode for proton-conducting solid oxide fuel cells |
| 000350 |
| Zinc Oxide Nanowire As an Electron-Extraction Layer for Broadband Polymer Photodetectors with an Inverted Device Structure |
| 000360 |
| Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials |
| 000365 |
| The suppression and recovery of martensitic transformation in a Ni-Co-Mn-In magnetic shape memory alloy |
| 000379 |
| Temperature dependent empirical pseudopotential theory for self-assembled quantum dots |
| 000415 |
| Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells |
| 000423 |
| Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties |
| 000427 |
| Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors |
| 000429 |
| Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors |
| 000430 |
| Quantum Dot (QD)-Modified Carbon Tape Electrodes for Reproducible Electrochemiluminescence (ECL) Emission on a Paper-Based Platform |
| 000431 |
| Quantification of 8-OxodGuo Lesions in Double-Stranded DNA Using a Photoelectrochemical DNA Sensor |
| 000438 |
| Prediction of the Cu-Ga-In Ternary Phase Diagram |
| 000440 |
| Plasmonic Nanolaser Using Epitaxially Grown Silver Film |
| 000441 |
| Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films |
| 000442 |
| Piezo-Phototronic Effect on Electroluminescence Properties of p-Type GaN Thin Films |
| 000443 |
| Physical, optical, electronic properties and mobility measurements of a new donor-acceptor-donor oligomer |
| 000457 |
| One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires |
| 000459 |
| Non-water ionic diode based on bias-dependent precipitation |
| 000484 |
| Interplay of cleaning and de-doping in oxygen plasma treated high work function indium tin oxide (ITO) |
| 000487 |
| Integrated ZnO nanotube arrays as efficient dye-sensitized solar cells |
| 000523 |
| Gold Nanoclusters as Signal Amplification Labels for Optical Immunosensors |
| 000530 |
| Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well |
| 000541 |
| Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress |
| 000555 |
| Electrochromic Poly(DNTD)/WO3 Nanocomposite Films via Electorpolymerization |
| 000561 |
| Efficient white polymer light-emitting diodes employing a silver nanowire-polymer composite electrode |
| 000571 |
| Effects of Thiophene Units on Substituted Benzothiadiazole and Benzodithiophene Copolymers for Photovoltaic Applications |
| 000593 |
| DFT Study of CO2 Adsorption and Hydrogenation on the In2O3 Surface |
| 000637 |
| A novel poly(aryl ether) containing azobenzene chromophore and pendant oligoaniline: Synthesis and electrochromic properties |
| 000641 |
| A Novel Clinically Translatable Fluorescent Nanoparticle for Targeted Molecular Imaging of Tumors in Living Subjects |
| 000659 |
| Top Transmission Grating GaN LED Simulations for Light Extraction Improvement |
| 000686 |
| Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices |
| 000709 |
| Strong interface p-doping and band bending in C60 on MoOx |
| 000760 |
| Optimization of inverted tandem organic solar cells |
| 000784 |
| Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation |
| 000809 |
| Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors |
| 000821 |
| Improving the quantitation accuracy in noninvasive small animal single photon emission computed tomography imaging |
| 000831 |
| High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure |
| 000833 |
| High-Temperature Thermoelectric Properties of Co4Sb12-Based Skutterudites with Multiple Filler Atoms: Ce0.1InxYbyCo4Sb12 |
| 000854 |
| Field Stability of Piezoelectric Shear Properties in PIN-PMN-PT Crystals Under Large Drive Field |
| 000882 |
| Electrochromic kinetics of nanostructured poly(3,4-(2,2-dimethylpropylenedioxy)thiophene) film on plastic substrate |
| 000891 |
| Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices |
| 000919 |
| Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching |
| 000931 |
| Controlled synthesis of Cadmium-Free CuInS2/ZnS Quantum Dots |
| 000971 |
| A Nine-Connected Mixed-Ligand Nickel-Organic Framework and Its Gas Sorption Properties |
| 000985 |
| Thermally Tunable Polymer Microlenses for Biological Imaging |
| 000988 |
| Thermal behaviors of Al-based amorphous alloys bearing nanocrystalline In particles |
| 000A82 |
| One-step electrodeposition of platinum nanoflowers and their high efficient catalytic activity for methanol electro-oxidation |
| 000A84 |
| Observation of spin-dependent quantum jumps via quantum dot resonance fluorescence |
| 000A85 |
| Novel chitosan/gold-MPA nanocomposite for sequence-specific oligonucleotide detection |
| 000B38 |
| High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application |
| 000B41 |
| Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition |
| 000B43 |
| Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching |
| 000B74 |
| Electron localization and emission mechanism in wurtzite (Al, In, Ga)N alloys |
| 000B75 |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films |
| 000B77 |
| Electrogenerated chemiluminescence determination of C-reactive protein with carboxyl CdSe/ZnS core/shell quantum dots |
| 000B97 |
| Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process |
| 000C26 |
| Binding of In and Pb surfactants on Cu{1 1 1} surfaces |
| 000C48 |
| A Fluorene-Oxadiazole Copolymer for White Light-Emitting Electrochemical Cells |
| 000C50 |
| A Composite Transistor to Suppress Kink Phenomenon in HBTs for Broadband Design |
| 000C63 |
| Weak Localization and Electron-Electron Interactions in Indium-Doped ZnO Nanowires |
| 000D35 |
| Stability of TCO Window Layers for Thin-Film CIGS Solar Cells upon Damp Heat Exposures - Part II |
| 000E10 |
| Luminance materials containing carbazole and triphenylamine exhibiting high hole-transporting properties |
| 000E42 |
| High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm |
| 000F00 |
| Effects of Mn substitution on the structure and properties of chalcopyrite-type CuInSe2 |
| 000F02 |
| Effect of synthesis conditions on photocatalytic activities of nanoparticulate Ti02 thin films |
| 000F25 |
| Design and Fabrication of PIN-PMN-PT Single-Crystal High-Frequency Ultrasound Transducers |
| 000F36 |
| Controllable Synthesis of Various In2O3 Submicron/Nanostructures Using Chemical Vapor Deposition |
| 000F42 |
| Carbon nanofiber doped polypyrrole nanoscaffold for electrochemical monitoring of cell adhesion and proliferation |
| 000F47 |
| Bright and color-saturated quantum dot light-emitting diodes, new star for next generation displays and solid state lighting |
| 000F54 |
| An α-K3PMo3W9O40 film loaded with silver nanoparticles: Fabrication, characterization and properties |
| 000F93 |
| Transparent Al/WO3/Au film as anode for high efficiency organic light-emitting diodes |
| 001087 |
| Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm |
| 001119 |
| Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices |
| 001141 |
| Fluorescence and electrochemistry studies of pyrene-functionalized surface adlayers to probe the microenvironment formed by cholesterol |
| 001152 |
| Europium β-diketonates for red-emitting electroluminescent devices |
| 001159 |
| Emission dynamics of InAs self-assembled quantum dots with different cap layer structures |
| 001160 |
| Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems |
| 001174 |
| Electrical properties of InGaN grown by molecular beam epitaxy |
| 001321 |
| Probing the effects of cholesterol on pyrene-functionalized interfacial adlayers |
| 001331 |
| Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition |
| 001332 |
| Photoinduced electrooptics in the In2O3 nanocrystals incorporated into PMMA matrixes |
| 001367 |
| Kinetics of indium oxide-based thin film gas sensor response : The role of "redox" and adsorption/desorption processes in gas sensing effects |
| 001403 |
| Eye-safe compact scanning LIDAR technology |
| 001406 |
| Enhancement of light extraction of GaN light-emitting diode using opals layer |
| 001421 |
| Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy |
| 001454 |
| Direct current electrodeposition of carbon nanofibers in DMF |
| 001462 |
| Current-induced phase partitioning in eutectic indium-tin Pb-Free solder interconnect |
| 001467 |
| Conductive coatings and composites from latex-based dispersions |
| 001475 |
| Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method |
| 001537 |
| Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition |
| 001548 |
| Spontaneous growth of indium nanostructures |
| 001585 |
| Novel open-framework fluorinated indium phosphate with 14-ring intersecting channels: Assembled from 6*1 and racemic pillared secondary building units |
| 001596 |
| Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure |
| 001608 |
| Indium oxide nanostructures : Semiconductor nanowires |
| 001623 |
| Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents |
| 001626 |
| First-principles studies on the pressure dependences of the stress-strain relationship and elastic stability of semiconductors |
| 001683 |
| Bright and colour stable white polymer light-emitting diodes |
| 001705 |
| The structural and optical properties of Cu2O films electrodeposited on different substrates |
| 001707 |
| The enhanced PC and PEC oxidation of formic acid in aqueous solution using a Cu-TiO2/ITO film |
| 001730 |
| Study of quasi-monodisperse In2O3 nanocrystals : Synthesis and optical determination |
| 001751 |
| Preparation, structures, and band gaps of RbInS2 and RbInSe2 |
| 001761 |
| Photoluminescence pressure coefficients of InAs/GaAs quantum dots |
| 001797 |
| Indium phosphide nanocrystals formed in silica by sequential ion implantation |
| 001866 |
| A new layered zinc phosphate templated by protonated isonicotinate, [Zn2(C6H5NO2)2(HPO4)2] |
| 001875 |
| Chemistry-mediated two-dimensional to three-dimensional transition of In thin films |
| 001879 |
| Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes |
| 001880 |
| Anisotropic Metal-Insulator Transition in Epitaxial Thin Films |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001908 |
| Tunable and white light-emitting diodes of monolayer fluorinated benzoxazole graft copolymers |
| 001943 |
| Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers |
| 001962 |
| Resonant spin Hall conductance in two-dimensional electron systems with a Rashba interaction in a perpendicular magnetic field |
| 001963 |
| Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure |
| 001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
| 001A43 |
| Anisotropic metal-insulator transition in epitaxial thin films |
| 001A79 |
| Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A86 |
| Bright red-emitting electrophosphorescent device using osmium complex as a triplet emitter |
| 001A88 |
| Thermal property of tunnel-regenerated multiactive-region light-emitting diodes |
| 001A97 |
| Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity |
| 001B06 |
| In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
| 001B10 |
| Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure |
| 001B41 |
| Structures of indium oxide nanobelts |
| 001B54 |
| Radiolabeling of magnetic targeted carriers (MTC) with indium-111 |
| 001C09 |
| Extreme radiation hardness and light-weighted thin-film indium phosphide solar cell and its computer simulation |
| 001C19 |
| Effects of In2O3 on the properties of (Co, Nb)-doped SnO2 varistors |
| 001C59 |
| Fabrication and structural analysis of Al, Ga, and In nanocluster crystals |
| 001C62 |
| Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers |
| 001C65 |
| Anode modification of polyfluorene-based polymer light-emitting devices |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001D01 |
| Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers |
| 001E13 |
| Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures |
| 001E20 |
| Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors |
| 001E21 |
| Phonon-induced photoconductive response in doped semiconductors |
| 001E23 |
| Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure |
| 001E52 |
| Comparison of optical transitions in InGaN quantum well structures and microdisks |
| 001E58 |
| Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates |
| 001E64 |
| Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells |
| 001E65 |
| Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers |
| 001E69 |
| Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells |
| 001E99 |
| Study on the interaction between Ag and tris(8-hydroxyquinoline) aluminum using x-ray photoelectron spectroscopy |
| 001F16 |
| Photoelectric conversion properties of bilayer lipid membranes self-assembled on an ITO substrate |
| 001F76 |
| Active spacecraft potential control for Cluster: implementation and first results |
| 002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
| 002006 |
| Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002018 |
| 1.54 μm infrared photoluminescence and electroluminescence from an erbium organic compound |
| 002049 |
| Two-dimensional ordered arrays of silica nanoparticles |
| 002130 |
| Cross-sectional high-resolution transmission electron microscopy of the microstructure of electrochromic nickel oxide |
| 002157 |
| Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well |
| 002171 |
| Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells |
| 002172 |
| Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes |
| 002176 |
| Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices |
| 002185 |
| Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles |
| 002191 |
| Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells |
| 002199 |
| Bright-blue electroluminescence from a silyl-substituted ter-(phenylene-vinylene) derivative |
| 002233 |
| Structural and optical characterization of InAs nanostructures grown on high-index InP substrates |
| 002240 |
| Self-organization of wire-like InAs nanostructures on InP |
| 002243 |
| Room temperature continuous wave visible vertical cavity surface emitting laser |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
| 002284 |
| Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode |
| 002303 |
| Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells |
| 002330 |
| The directionality of quantum confinement on strain-induced quantum-wire lasers |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002372 |
| Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities |
| 002382 |
| Melting and freezing behavior of embedded nanoparticles in ball-milled Al-10 wt% M (M = In, Sn, Bi, Cd, Pb) mixtures |
| 002388 |
| Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers |
| 002450 |
| Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature |
| 002452 |
| Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region |
| 002457 |
| Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells |
| 002468 |
| Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures |
| 002508 |
| Initial interface reaction in indium/amorphous selenium multilayer thin films |
| 002542 |
| Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor |
| 002545 |
| First-principles study of the quaternary semiconductor superlattices (GaX)1/(YAs)1 (X=N, P; Y=Al, In) |
| 002555 |
| Effective mass of two-dimensional electron gas in δ-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells |
| 002631 |
| Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002636 |
| Nonlinear polarization switching in a semiconductor single quantum well optical amplifier |
| 002647 |
| A high-current-gain, high-speed P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor |
| 002657 |
| Annealing-induced near-surface ordering in disordered Ga0.5In0.5P |
| 002662 |
| Band gap of ''completely disordered'' Ga0.52In0.48P |
| 002685 |
| Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002746 |
| Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures |
| 002748 |
| Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells |
| 002749 |
| Electronic properties of AlxGa1-xSb/InAs quantum wells |
| 002756 |
| Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells |
| 002759 |
| The band gap of ''perfectly disordered'' Ga0.52In0.48P |
