Spontaneous emission in GaN/InGaN photonic crystal nanopillars.
Identifieur interne : 002545 ( Main/Exploration ); précédent : 002544; suivant : 002546Spontaneous emission in GaN/InGaN photonic crystal nanopillars.
Auteurs : RBID : pubmed:19551097English descriptors
- KwdEn :
- Computer Simulation, Computer-Aided Design, Crystallization (methods), Equipment Design, Equipment Failure Analysis, Gallium (chemistry), Gallium (radiation effects), Indium (chemistry), Indium (radiation effects), Light, Lighting (instrumentation), Models, Chemical, Nanotechnology (instrumentation), Nanotechnology (methods), Nanotubes (chemistry), Nanotubes (ultrastructure), Reproducibility of Results, Sensitivity and Specificity.
- MESH :
- chemical , chemistry : Gallium, Indium.
- chemistry : Nanotubes.
- instrumentation : Lighting, Nanotechnology.
- methods : Crystallization, Nanotechnology.
- chemical , radiation effects : Gallium, Indium.
- ultrastructure : Nanotubes.
- Computer Simulation, Computer-Aided Design, Equipment Design, Equipment Failure Analysis, Light, Models, Chemical, Reproducibility of Results, Sensitivity and Specificity.
Abstract
We investigate the physics of spontaneous emission in a photonic crystal (PhC) made of GaN rods with embedded InGaN quantum wells, formed on a thick GaN layer. Although the PhC lies on a higher-index medium, we evidence the existence of unexpected quasi-guided Bloch modes which are strongly localized in the PhC region and possess a long lifetime. These modes determine the behavior of spontaneous emission such as the emission diagram and Purcell effect, as would happen in the usual case of emission in a PhC membrane.
PubMed: 19551097
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Le document en format XML
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<author><name sortKey="David, Aurelien" uniqKey="David A">Aurelien David</name>
<affiliation wicri:level="1"><nlm:affiliation>Laboratoire Charles Fabry de l'Institut d'Optique, Campus Polytechnique, Palaiseau, France. aurelien.david@polytechnique.org</nlm:affiliation>
<country xml:lang="fr">France</country>
<wicri:regionArea>Laboratoire Charles Fabry de l'Institut d'Optique, Campus Polytechnique, Palaiseau</wicri:regionArea>
<placeName><region type="région">Île-de-France</region>
<settlement type="city">Palaiseau</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Benisty, Henri" uniqKey="Benisty H">Henri Benisty</name>
</author>
<author><name sortKey="Weisbuch, Claude" uniqKey="Weisbuch C">Claude Weisbuch</name>
</author>
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<publicationStmt><date when="2007">2007</date>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computer Simulation</term>
<term>Computer-Aided Design</term>
<term>Crystallization (methods)</term>
<term>Equipment Design</term>
<term>Equipment Failure Analysis</term>
<term>Gallium (chemistry)</term>
<term>Gallium (radiation effects)</term>
<term>Indium (chemistry)</term>
<term>Indium (radiation effects)</term>
<term>Light</term>
<term>Lighting (instrumentation)</term>
<term>Models, Chemical</term>
<term>Nanotechnology (instrumentation)</term>
<term>Nanotechnology (methods)</term>
<term>Nanotubes (chemistry)</term>
<term>Nanotubes (ultrastructure)</term>
<term>Reproducibility of Results</term>
<term>Sensitivity and Specificity</term>
</keywords>
<keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Gallium</term>
<term>Indium</term>
</keywords>
<keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanotubes</term>
</keywords>
<keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Lighting</term>
<term>Nanotechnology</term>
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<term>Nanotechnology</term>
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<keywords scheme="MESH" type="chemical" qualifier="radiation effects" xml:lang="en"><term>Gallium</term>
<term>Indium</term>
</keywords>
<keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanotubes</term>
</keywords>
<keywords scheme="MESH" xml:lang="en"><term>Computer Simulation</term>
<term>Computer-Aided Design</term>
<term>Equipment Design</term>
<term>Equipment Failure Analysis</term>
<term>Light</term>
<term>Models, Chemical</term>
<term>Reproducibility of Results</term>
<term>Sensitivity and Specificity</term>
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<front><div type="abstract" xml:lang="en">We investigate the physics of spontaneous emission in a photonic crystal (PhC) made of GaN rods with embedded InGaN quantum wells, formed on a thick GaN layer. Although the PhC lies on a higher-index medium, we evidence the existence of unexpected quasi-guided Bloch modes which are strongly localized in the PhC region and possess a long lifetime. These modes determine the behavior of spontaneous emission such as the emission diagram and Purcell effect, as would happen in the usual case of emission in a PhC membrane.</div>
</front>
</TEI>
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<DateCreated><Year>2009</Year>
<Month>06</Month>
<Day>24</Day>
</DateCreated>
<DateCompleted><Year>2009</Year>
<Month>07</Month>
<Day>24</Day>
</DateCompleted>
<DateRevised><Year>2013</Year>
<Month>11</Month>
<Day>21</Day>
</DateRevised>
<Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN>
<JournalIssue CitedMedium="Internet"><Volume>15</Volume>
<Issue>26</Issue>
<PubDate><Year>2007</Year>
<Month>Dec</Month>
<Day>24</Day>
</PubDate>
</JournalIssue>
<Title>Optics express</Title>
<ISOAbbreviation>Opt Express</ISOAbbreviation>
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<ArticleTitle>Spontaneous emission in GaN/InGaN photonic crystal nanopillars.</ArticleTitle>
<Pagination><MedlinePgn>17991-8004</MedlinePgn>
</Pagination>
<Abstract><AbstractText>We investigate the physics of spontaneous emission in a photonic crystal (PhC) made of GaN rods with embedded InGaN quantum wells, formed on a thick GaN layer. Although the PhC lies on a higher-index medium, we evidence the existence of unexpected quasi-guided Bloch modes which are strongly localized in the PhC region and possess a long lifetime. These modes determine the behavior of spontaneous emission such as the emission diagram and Purcell effect, as would happen in the usual case of emission in a PhC membrane.</AbstractText>
</Abstract>
<AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>David</LastName>
<ForeName>Aurelien</ForeName>
<Initials>A</Initials>
<Affiliation>Laboratoire Charles Fabry de l'Institut d'Optique, Campus Polytechnique, Palaiseau, France. aurelien.david@polytechnique.org</Affiliation>
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<Author ValidYN="Y"><LastName>Benisty</LastName>
<ForeName>Henri</ForeName>
<Initials>H</Initials>
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<Author ValidYN="Y"><LastName>Weisbuch</LastName>
<ForeName>Claude</ForeName>
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<ChemicalList><Chemical><RegistryNumber>0</RegistryNumber>
<NameOfSubstance>gallium nitride</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>0</RegistryNumber>
<NameOfSubstance>indium nitride</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>045A6V3VFX</RegistryNumber>
<NameOfSubstance>Indium</NameOfSubstance>
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<Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber>
<NameOfSubstance>Gallium</NameOfSubstance>
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<MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName>
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<MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName>
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<MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName>
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<QualifierName MajorTopicYN="N">radiation effects</QualifierName>
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<MeshHeading><DescriptorName MajorTopicYN="N">Light</DescriptorName>
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</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="Y">Models, Chemical</DescriptorName>
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<QualifierName MajorTopicYN="N">methods</QualifierName>
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<MeshHeading><DescriptorName MajorTopicYN="N">Nanotubes</DescriptorName>
<QualifierName MajorTopicYN="Y">chemistry</QualifierName>
<QualifierName MajorTopicYN="N">ultrastructure</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Reproducibility of Results</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Sensitivity and Specificity</DescriptorName>
</MeshHeading>
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