Flexible inorganic nanowire light-emitting diode.
Identifieur interne : 002327 ( Main/Exploration ); précédent : 002326; suivant : 002328Flexible inorganic nanowire light-emitting diode.
Auteurs : RBID : pubmed:18220439English descriptors
- KwdEn :
- Crystallization (methods), Elasticity, Equipment Design, Equipment Failure Analysis, Inorganic Chemicals (chemistry), Lighting (instrumentation), Lighting (methods), Macromolecular Substances (chemistry), Materials Testing, Molecular Conformation, Nanostructures (chemistry), Nanostructures (ultrastructure), Nanotechnology (instrumentation), Nanotechnology (methods), Particle Size, Semiconductors, Surface Properties, Zinc Oxide (chemistry).
- MESH :
- chemical , chemistry : Inorganic Chemicals, Macromolecular Substances, Zinc Oxide.
- chemistry : Nanostructures.
- instrumentation : Lighting, Nanotechnology.
- methods : Crystallization, Lighting, Nanotechnology.
- ultrastructure : Nanostructures.
- Elasticity, Equipment Design, Equipment Failure Analysis, Materials Testing, Molecular Conformation, Particle Size, Semiconductors, Surface Properties.
Abstract
We report a highly flexible light-emitting device in which inorganic nanowires are the optically active components. The single-crystalline ZnO nanowires are grown at 80 degrees C on flexible polymer-based indium-tin-oxide-coated substrates and subsequently encapsulated in a minimal-thickness, void-filling polystyrene film. A reflective top contact serving as the anode in the diode structure is provided by a strongly doped p-type polymer and an evaporated Au film. The emission through the polymer side of this arrangement covers most of the visual region. Electrical and optical properties as well as performance limitations of the device structure are discussed.
DOI: 10.1021/nl072784l
PubMed: 18220439
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Flexible inorganic nanowire light-emitting diode.</title><author><name sortKey="Nadarajah, Athavan" uniqKey="Nadarajah A">Athavan Nadarajah</name><affiliation wicri:level="1"><nlm:affiliation>Physics Department, Portland State University, 1719 SW 10th Avenue, Portland, Oregon 97201, USA.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Physics Department, Portland State University, 1719 SW 10th Avenue, Portland, Oregon 97201</wicri:regionArea></affiliation></author><author><name sortKey="Word, Robert C" uniqKey="Word R">Robert C Word</name></author><author><name sortKey="Meiss, Jan" uniqKey="Meiss J">Jan Meiss</name></author><author><name sortKey="K Nenkamp, Rolf" uniqKey="K Nenkamp R">Rolf Könenkamp</name></author></titleStmt><publicationStmt><date when="2008">2008</date><idno type="doi">10.1021/nl072784l</idno><idno type="RBID">pubmed:18220439</idno><idno type="pmid">18220439</idno><idno type="wicri:Area/Main/Corpus">002516</idno><idno type="wicri:Area/Main/Curation">002516</idno><idno type="wicri:Area/Main/Exploration">002327</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystallization (methods)</term><term>Elasticity</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Inorganic Chemicals (chemistry)</term><term>Lighting (instrumentation)</term><term>Lighting (methods)</term><term>Macromolecular Substances (chemistry)</term><term>Materials Testing</term><term>Molecular Conformation</term><term>Nanostructures (chemistry)</term><term>Nanostructures (ultrastructure)</term><term>Nanotechnology (instrumentation)</term><term>Nanotechnology (methods)</term><term>Particle Size</term><term>Semiconductors</term><term>Surface Properties</term><term>Zinc Oxide (chemistry)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Inorganic Chemicals</term><term>Macromolecular Substances</term><term>Zinc Oxide</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Lighting</term><term>Nanotechnology</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Crystallization</term><term>Lighting</term><term>Nanotechnology</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Elasticity</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Materials Testing</term><term>Molecular Conformation</term><term>Particle Size</term><term>Semiconductors</term><term>Surface Properties</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a highly flexible light-emitting device in which inorganic nanowires are the optically active components. The single-crystalline ZnO nanowires are grown at 80 degrees C on flexible polymer-based indium-tin-oxide-coated substrates and subsequently encapsulated in a minimal-thickness, void-filling polystyrene film. A reflective top contact serving as the anode in the diode structure is provided by a strongly doped p-type polymer and an evaporated Au film. The emission through the polymer side of this arrangement covers most of the visual region. Electrical and optical properties as well as performance limitations of the device structure are discussed.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">18220439</PMID><DateCreated><Year>2008</Year><Month>02</Month><Day>14</Day></DateCreated><DateCompleted><Year>2008</Year><Month>04</Month><Day>15</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Print">1530-6984</ISSN><JournalIssue CitedMedium="Print"><Volume>8</Volume><Issue>2</Issue><PubDate><Year>2008</Year><Month>Feb</Month></PubDate></JournalIssue><Title>Nano letters</Title><ISOAbbreviation>Nano Lett.</ISOAbbreviation></Journal><ArticleTitle>Flexible inorganic nanowire light-emitting diode.</ArticleTitle><Pagination><MedlinePgn>534-7</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/nl072784l</ELocationID><Abstract><AbstractText>We report a highly flexible light-emitting device in which inorganic nanowires are the optically active components. The single-crystalline ZnO nanowires are grown at 80 degrees C on flexible polymer-based indium-tin-oxide-coated substrates and subsequently encapsulated in a minimal-thickness, void-filling polystyrene film. A reflective top contact serving as the anode in the diode structure is provided by a strongly doped p-type polymer and an evaporated Au film. The emission through the polymer side of this arrangement covers most of the visual region. Electrical and optical properties as well as performance limitations of the device structure are discussed.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Nadarajah</LastName><ForeName>Athavan</ForeName><Initials>A</Initials><Affiliation>Physics Department, Portland State University, 1719 SW 10th Avenue, Portland, Oregon 97201, USA.</Affiliation></Author><Author ValidYN="Y"><LastName>Word</LastName><ForeName>Robert C</ForeName><Initials>RC</Initials></Author><Author ValidYN="Y"><LastName>Meiss</LastName><ForeName>Jan</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Könenkamp</LastName><ForeName>Rolf</ForeName><Initials>R</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Evaluation Studies</PublicationType><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, U.S. Gov't, Non-P.H.S.</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2008</Year><Month>01</Month><Day>26</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nano Lett</MedlineTA><NlmUniqueID>101088070</NlmUniqueID><ISSNLinking>1530-6984</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Inorganic Chemicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Macromolecular Substances</NameOfSubstance></Chemical><Chemical><RegistryNumber>SOI2LOH54Z</RegistryNumber><NameOfSubstance>Zinc Oxide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Crystallization</DescriptorName><QualifierName MajorTopicYN="N">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Elasticity</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Inorganic Chemicals</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Lighting</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName><QualifierName MajorTopicYN="N">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Macromolecular Substances</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Molecular Conformation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanostructures</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanotechnology</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName><QualifierName MajorTopicYN="N">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Properties</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Zinc Oxide</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2008</Year><Month>1</Month><Day>26</Day></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2008</Year><Month>1</Month><Day>29</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2008</Year><Month>4</Month><Day>16</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2008</Year><Month>1</Month><Day>29</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/nl072784l</ArticleId><ArticleId IdType="pubmed">18220439</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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