Charge state switching of deep levels for low-power optical modulation in silicon waveguides.
Identifieur interne : 001559 ( Main/Exploration ); précédent : 001558; suivant : 001560Charge state switching of deep levels for low-power optical modulation in silicon waveguides.
Auteurs : RBID : pubmed:21964074Abstract
We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.
PubMed: 21964074
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Charge state switching of deep levels for low-power optical modulation in silicon waveguides.</title><author><name sortKey="Logan, D F" uniqKey="Logan D">D F Logan</name><affiliation wicri:level="1"><nlm:affiliation>Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, ON, Canada. logand@mcmaster.ca</nlm:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, ON</wicri:regionArea></affiliation></author><author><name sortKey="Velha, P" uniqKey="Velha P">P Velha</name></author><author><name sortKey="Sorel, M" uniqKey="Sorel M">M Sorel</name></author><author><name sortKey="De La Rue, R M" uniqKey="De La Rue R">R M De la Rue</name></author><author><name sortKey="Wojcik, G" uniqKey="Wojcik G">G Wojcik</name></author><author><name sortKey="Goebel, A" uniqKey="Goebel A">A Goebel</name></author><author><name sortKey="Jessop, P E" uniqKey="Jessop P">P E Jessop</name></author><author><name sortKey="Knights, A P" uniqKey="Knights A">A P Knights</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="RBID">pubmed:21964074</idno><idno type="pmid">21964074</idno><idno type="wicri:Area/Main/Corpus">001125</idno><idno type="wicri:Area/Main/Curation">001125</idno><idno type="wicri:Area/Main/Exploration">001559</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21964074</PMID><DateCreated><Year>2011</Year><Month>10</Month><Day>03</Day></DateCreated><DateCompleted><Year>2012</Year><Month>04</Month><Day>02</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1539-4794</ISSN><JournalIssue CitedMedium="Internet"><Volume>36</Volume><Issue>19</Issue><PubDate><Year>2011</Year><Month>Oct</Month><Day>1</Day></PubDate></JournalIssue><Title>Optics letters</Title><ISOAbbreviation>Opt Lett</ISOAbbreviation></Journal><ArticleTitle>Charge state switching of deep levels for low-power optical modulation in silicon waveguides.</ArticleTitle><Pagination><MedlinePgn>3717-9</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OL.36.003717</ELocationID><Abstract><AbstractText>We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.</AbstractText><CopyrightInformation>© 2011 Optical Society of America</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Logan</LastName><ForeName>D F</ForeName><Initials>DF</Initials><Affiliation>Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, ON, Canada. logand@mcmaster.ca</Affiliation></Author><Author ValidYN="Y"><LastName>Velha</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Sorel</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>De la Rue</LastName><ForeName>R M</ForeName><Initials>RM</Initials></Author><Author ValidYN="Y"><LastName>Wojcik</LastName><ForeName>G</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Goebel</LastName><ForeName>A</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Jessop</LastName><ForeName>P E</ForeName><Initials>PE</Initials></Author><Author ValidYN="Y"><LastName>Knights</LastName><ForeName>A P</ForeName><Initials>AP</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Lett</MedlineTA><NlmUniqueID>7708433</NlmUniqueID><ISSNLinking>0146-9592</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>10</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>10</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>10</Month><Day>4</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">222550</ArticleId><ArticleId IdType="pubmed">21964074</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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