Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing.
Identifieur interne : 001531 ( Main/Exploration ); précédent : 001530; suivant : 001532Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing.
Auteurs : RBID : pubmed:21222453Abstract
Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transistors based on In(2)O(3) nanowires, improve the saturation of the source-drain current, and permanently shift the threshold voltage to the positive direction. We applied this technique and successfully shifted the switching threshold voltages of NMOS-based inverters and improved their noise margin, in both depletion and enhancement modes. Our demonstration provides a method to trim the parameters of individual nanowire transistors, and suggests potential for large-scale integration of nanowire-based circuit blocks and systems.
DOI: 10.1021/nn102723w
PubMed: 21222453
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing.</title><author><name sortKey="Lee, Chunghun" uniqKey="Lee C">Chunghun Lee</name><affiliation wicri:level="1"><nlm:affiliation>School of Electrical and Computer Engineering, and Birck Nanotechnology Center, Purdue University, 465 Northwestern Avenue, West Lafayette, Indiana 47907, USA.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>School of Electrical and Computer Engineering, and Birck Nanotechnology Center, Purdue University, 465 Northwestern Avenue, West Lafayette, Indiana 47907</wicri:regionArea></affiliation></author><author><name sortKey="Srisungsitthisunti, Pornsak" uniqKey="Srisungsitthisunti P">Pornsak Srisungsitthisunti</name></author><author><name sortKey="Park, Sangphill" uniqKey="Park S">Sangphill Park</name></author><author><name sortKey="Kim, Seongmin" uniqKey="Kim S">Seongmin Kim</name></author><author><name sortKey="Xu, Xianfan" uniqKey="Xu X">Xianfan Xu</name></author><author><name sortKey="Roy, Kaushik" uniqKey="Roy K">Kaushik Roy</name></author><author><name sortKey="Janes, David B" uniqKey="Janes D">David B Janes</name></author><author><name sortKey="Zhou, Chongwu" uniqKey="Zhou C">Chongwu Zhou</name></author><author><name sortKey="Ju, Sanghyun" uniqKey="Ju S">Sanghyun Ju</name></author><author><name sortKey="Qi, Minghao" uniqKey="Qi M">Minghao Qi</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1021/nn102723w</idno><idno type="RBID">pubmed:21222453</idno><idno type="pmid">21222453</idno><idno type="wicri:Area/Main/Corpus">001618</idno><idno type="wicri:Area/Main/Curation">001618</idno><idno type="wicri:Area/Main/Exploration">001531</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transistors based on In(2)O(3) nanowires, improve the saturation of the source-drain current, and permanently shift the threshold voltage to the positive direction. We applied this technique and successfully shifted the switching threshold voltages of NMOS-based inverters and improved their noise margin, in both depletion and enhancement modes. Our demonstration provides a method to trim the parameters of individual nanowire transistors, and suggests potential for large-scale integration of nanowire-based circuit blocks and systems.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21222453</PMID><DateCreated><Year>2011</Year><Month>02</Month><Day>22</Day></DateCreated><DateCompleted><Year>2011</Year><Month>05</Month><Day>20</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1936-086X</ISSN><JournalIssue CitedMedium="Internet"><Volume>5</Volume><Issue>2</Issue><PubDate><Year>2011</Year><Month>Feb</Month><Day>22</Day></PubDate></JournalIssue><Title>ACS nano</Title><ISOAbbreviation>ACS Nano</ISOAbbreviation></Journal><ArticleTitle>Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing.</ArticleTitle><Pagination><MedlinePgn>1095-101</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/nn102723w</ELocationID><Abstract><AbstractText>Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transistors based on In(2)O(3) nanowires, improve the saturation of the source-drain current, and permanently shift the threshold voltage to the positive direction. We applied this technique and successfully shifted the switching threshold voltages of NMOS-based inverters and improved their noise margin, in both depletion and enhancement modes. Our demonstration provides a method to trim the parameters of individual nanowire transistors, and suggests potential for large-scale integration of nanowire-based circuit blocks and systems.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Chunghun</ForeName><Initials>C</Initials><Affiliation>School of Electrical and Computer Engineering, and Birck Nanotechnology Center, Purdue University, 465 Northwestern Avenue, West Lafayette, Indiana 47907, USA.</Affiliation></Author><Author ValidYN="Y"><LastName>Srisungsitthisunti</LastName><ForeName>Pornsak</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Park</LastName><ForeName>Sangphill</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Seongmin</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Xu</LastName><ForeName>Xianfan</ForeName><Initials>X</Initials></Author><Author ValidYN="Y"><LastName>Roy</LastName><ForeName>Kaushik</ForeName><Initials>K</Initials></Author><Author ValidYN="Y"><LastName>Janes</LastName><ForeName>David B</ForeName><Initials>DB</Initials></Author><Author ValidYN="Y"><LastName>Zhou</LastName><ForeName>Chongwu</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Ju</LastName><ForeName>Sanghyun</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Qi</LastName><ForeName>Minghao</ForeName><Initials>M</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType><PublicationType>Research Support, U.S. Gov't, Non-P.H.S.</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>01</Month><Day>11</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Nano</MedlineTA><NlmUniqueID>101313589</NlmUniqueID><ISSNLinking>1936-0851</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>1</Month><Day>11</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>1</Month><Day>13</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>1</Month><Day>13</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>1</Month><Day>13</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/nn102723w</ArticleId><ArticleId IdType="pubmed">21222453</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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