Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices.
Identifieur interne : 001529 ( Main/Exploration ); précédent : 001528; suivant : 001530Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices.
Auteurs : RBID : pubmed:21838312Abstract
We report on unconventional, noncovalent heteroepitaxy of vertical indium arsenide (InAs) nanowires on thin graphitic films in terms of van der Waals (VDW) interactions. Nearly coherent in-plane lattice matching (misfit of 0.49%) between InAs and the graphitic surface plays a critical role in the epitaxial formation of vertical InAs nanowires on graphitic substrates. Otherwise, gallium arsenide (misfit of -6.22%) is grown to be island morphologies. Cross-sectional transmission electron microscopy analyses show that 1-2 monomolecular layer ledges or kinks facilitate heterogeneous nucleation of InAs on nonwetting graphitic surfaces, forming the nuclei and promoting the subsequent nanowire growth with strong VDW interactions at the heterojunction. We further demonstrate the controlled VDW epitaxy method for high-yield and uniform InAs nanowire arrays on honeycomb carbon surface utilizing substrate surface etching and patterning techniques. Our work opens a new platform for the III-arsenide/graphene hybrid junction electronics and optoelectronics.
DOI: 10.1021/nn2025786
PubMed: 21838312
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices.</title><author><name sortKey="Hong, Young Joon" uniqKey="Hong Y">Young Joon Hong</name><affiliation wicri:level="1"><nlm:affiliation>Research Center for Integrated Quantum Electronics (RCIQE) & Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan. yjhong@rciqe.hokudai.ac.jp</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Research Center for Integrated Quantum Electronics (RCIQE) & Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628</wicri:regionArea></affiliation></author><author><name sortKey="Fukui, Takashi" uniqKey="Fukui T">Takashi Fukui</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1021/nn2025786</idno><idno type="RBID">pubmed:21838312</idno><idno type="pmid">21838312</idno><idno type="wicri:Area/Main/Corpus">001205</idno><idno type="wicri:Area/Main/Curation">001205</idno><idno type="wicri:Area/Main/Exploration">001529</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on unconventional, noncovalent heteroepitaxy of vertical indium arsenide (InAs) nanowires on thin graphitic films in terms of van der Waals (VDW) interactions. Nearly coherent in-plane lattice matching (misfit of 0.49%) between InAs and the graphitic surface plays a critical role in the epitaxial formation of vertical InAs nanowires on graphitic substrates. Otherwise, gallium arsenide (misfit of -6.22%) is grown to be island morphologies. Cross-sectional transmission electron microscopy analyses show that 1-2 monomolecular layer ledges or kinks facilitate heterogeneous nucleation of InAs on nonwetting graphitic surfaces, forming the nuclei and promoting the subsequent nanowire growth with strong VDW interactions at the heterojunction. We further demonstrate the controlled VDW epitaxy method for high-yield and uniform InAs nanowire arrays on honeycomb carbon surface utilizing substrate surface etching and patterning techniques. Our work opens a new platform for the III-arsenide/graphene hybrid junction electronics and optoelectronics.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21838312</PMID><DateCreated><Year>2011</Year><Month>09</Month><Day>28</Day></DateCreated><DateCompleted><Year>2012</Year><Month>01</Month><Day>25</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1936-086X</ISSN><JournalIssue CitedMedium="Internet"><Volume>5</Volume><Issue>9</Issue><PubDate><Year>2011</Year><Month>Sep</Month><Day>27</Day></PubDate></JournalIssue><Title>ACS nano</Title><ISOAbbreviation>ACS Nano</ISOAbbreviation></Journal><ArticleTitle>Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices.</ArticleTitle><Pagination><MedlinePgn>7576-84</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/nn2025786</ELocationID><Abstract><AbstractText>We report on unconventional, noncovalent heteroepitaxy of vertical indium arsenide (InAs) nanowires on thin graphitic films in terms of van der Waals (VDW) interactions. Nearly coherent in-plane lattice matching (misfit of 0.49%) between InAs and the graphitic surface plays a critical role in the epitaxial formation of vertical InAs nanowires on graphitic substrates. Otherwise, gallium arsenide (misfit of -6.22%) is grown to be island morphologies. Cross-sectional transmission electron microscopy analyses show that 1-2 monomolecular layer ledges or kinks facilitate heterogeneous nucleation of InAs on nonwetting graphitic surfaces, forming the nuclei and promoting the subsequent nanowire growth with strong VDW interactions at the heterojunction. We further demonstrate the controlled VDW epitaxy method for high-yield and uniform InAs nanowire arrays on honeycomb carbon surface utilizing substrate surface etching and patterning techniques. Our work opens a new platform for the III-arsenide/graphene hybrid junction electronics and optoelectronics.</AbstractText><CopyrightInformation>© 2011 American Chemical Society</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Hong</LastName><ForeName>Young Joon</ForeName><Initials>YJ</Initials><Affiliation>Research Center for Integrated Quantum Electronics (RCIQE) & Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan. yjhong@rciqe.hokudai.ac.jp</Affiliation></Author><Author ValidYN="Y"><LastName>Fukui</LastName><ForeName>Takashi</ForeName><Initials>T</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>08</Month><Day>18</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Nano</MedlineTA><NlmUniqueID>101313589</NlmUniqueID><ISSNLinking>1936-0851</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>8</Month><Day>18</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/nn2025786</ArticleId><ArticleId IdType="pubmed">21838312</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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