Indium oxide nanospirals made of kinked nanowires.
Identifieur interne : 001341 ( Main/Exploration ); précédent : 001340; suivant : 001342Indium oxide nanospirals made of kinked nanowires.
Auteurs : RBID : pubmed:21329335English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Macromolecular Substances.
- chemical : Indium.
- chemistry : Nanostructures.
- methods : Crystallization.
- ultrastructure : Nanostructures.
- Materials Testing, Molecular Conformation, Particle Size, Surface Properties.
Abstract
Helical inorganic nanostructures have received great attention due to their unique structures that could be interesting for both fundamental research and nanodevice applications. Using a tube-in-tube laser ablation chemical vapor deposition (CVD) method with gold nanoparticles as the catalysts, we reported the synthesis of self-assembled kinked In2O3 nanospirals and multikinked nanowires. As-synthesized nanostructures showed ultrafast photoinduced reversible wettability switching behavior from hydrophobic (132.7°) to superhydrophilic (0°) within 14 min. Single kinked In2O3 nanostructure-based field-effect transistors were fabricated, and mobilities higher than 200 cm2/(V·s) were obtained, revealing good opportunity in fabricating high-performance electronic and optoelectronic devices.
DOI: 10.1021/nn103358y
PubMed: 21329335
Links toward previous steps (curation, corpus...)
Le document en format XML
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<author><name sortKey="Shen, Guozhen" uniqKey="Shen G">Guozhen Shen</name>
<affiliation wicri:level="1"><nlm:affiliation>Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China. gzshen@mail.hust.edu.cn</nlm:affiliation>
<country xml:lang="fr">République populaire de Chine</country>
<wicri:regionArea>Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074</wicri:regionArea>
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<author><name sortKey="Liang, Bo" uniqKey="Liang B">Bo Liang</name>
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<author><name sortKey="Wang, Xianfu" uniqKey="Wang X">Xianfu Wang</name>
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<author><name sortKey="Chen, Po Chiang" uniqKey="Chen P">Po-Chiang Chen</name>
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<author><name sortKey="Zhou, Chongwu" uniqKey="Zhou C">Chongwu Zhou</name>
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<term>Molecular Conformation</term>
<term>Nanostructures (chemistry)</term>
<term>Nanostructures (ultrastructure)</term>
<term>Particle Size</term>
<term>Surface Properties</term>
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<front><div type="abstract" xml:lang="en">Helical inorganic nanostructures have received great attention due to their unique structures that could be interesting for both fundamental research and nanodevice applications. Using a tube-in-tube laser ablation chemical vapor deposition (CVD) method with gold nanoparticles as the catalysts, we reported the synthesis of self-assembled kinked In2O3 nanospirals and multikinked nanowires. As-synthesized nanostructures showed ultrafast photoinduced reversible wettability switching behavior from hydrophobic (132.7°) to superhydrophilic (0°) within 14 min. Single kinked In2O3 nanostructure-based field-effect transistors were fabricated, and mobilities higher than 200 cm2/(V·s) were obtained, revealing good opportunity in fabricating high-performance electronic and optoelectronic devices.</div>
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<Abstract><AbstractText>Helical inorganic nanostructures have received great attention due to their unique structures that could be interesting for both fundamental research and nanodevice applications. Using a tube-in-tube laser ablation chemical vapor deposition (CVD) method with gold nanoparticles as the catalysts, we reported the synthesis of self-assembled kinked In2O3 nanospirals and multikinked nanowires. As-synthesized nanostructures showed ultrafast photoinduced reversible wettability switching behavior from hydrophobic (132.7°) to superhydrophilic (0°) within 14 min. Single kinked In2O3 nanostructure-based field-effect transistors were fabricated, and mobilities higher than 200 cm2/(V·s) were obtained, revealing good opportunity in fabricating high-performance electronic and optoelectronic devices.</AbstractText>
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<ForeName>Guozhen</ForeName>
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