The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires.
Identifieur interne : 001088 ( Main/Exploration ); précédent : 001087; suivant : 001089The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires.
Auteurs : RBID : pubmed:21659686Abstract
High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor-liquid-solid growth mode, at a substrate temperature of as low as 540 °C. The high solubility of Sn in the nanowires was explained with the existence of Sn(2+) ions along with Sn(4+) ions: the coexistence of Sn(2+) and Sn(4+) ions facilitated their high substitutional incorporation into the In(2)O(3) lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In(3+) ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10(-3) Ω cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn(2+) and Sn(4+).
DOI: 10.1088/0957-4484/22/28/285712
PubMed: 21659686
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The high solubility of Sn in the nanowires was explained with the existence of Sn(2+) ions along with Sn(4+) ions: the coexistence of Sn(2+) and Sn(4+) ions facilitated their high substitutional incorporation into the In(2)O(3) lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In(3+) ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10(-3) Ω cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn(2+) and Sn(4+).</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21659686</PMID><DateCreated><Year>2011</Year><Month>06</Month><Day>10</Day></DateCreated><DateCompleted><Year>2011</Year><Month>12</Month><Day>19</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>22</Volume><Issue>28</Issue><PubDate><Year>2011</Year><Month>Jul</Month><Day>15</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires.</ArticleTitle><Pagination><MedlinePgn>285712</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/22/28/285712</ELocationID><Abstract><AbstractText>High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor-liquid-solid growth mode, at a substrate temperature of as low as 540 °C. The high solubility of Sn in the nanowires was explained with the existence of Sn(2+) ions along with Sn(4+) ions: the coexistence of Sn(2+) and Sn(4+) ions facilitated their high substitutional incorporation into the In(2)O(3) lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In(3+) ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10(-3) Ω cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn(2+) and Sn(4+).</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Park</LastName><ForeName>Kyung-Soo</ForeName><Initials>KS</Initials><Affiliation>Nano-Photonics Research Center, Korea Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, 130-650, Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Choi</LastName><ForeName>Young-Jin</ForeName><Initials>YJ</Initials></Author><Author ValidYN="Y"><LastName>Kang</LastName><ForeName>Jin-Gu</ForeName><Initials>JG</Initials></Author><Author ValidYN="Y"><LastName>Sung</LastName><ForeName>Yun-Mo</ForeName><Initials>YM</Initials></Author><Author ValidYN="Y"><LastName>Park</LastName><ForeName>Jae-Gwan</ForeName><Initials>JG</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>06</Month><Day>09</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>6</Month><Day>09</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>6</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>6</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>6</Month><Day>11</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0957-4484(11)82495-5</ArticleId><ArticleId IdType="doi">10.1088/0957-4484/22/28/285712</ArticleId><ArticleId IdType="pubmed">21659686</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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