Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.
Identifieur interne : 000F17 ( Main/Exploration ); précédent : 000F16; suivant : 000F18Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.
Auteurs : RBID : pubmed:22957907Abstract
A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.
DOI: 10.1021/am301342x
PubMed: 22957907
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.</title><author><name sortKey="Kim, Hyun Suk" uniqKey="Kim H">Hyun-Suk Kim</name><affiliation wicri:level="1"><nlm:affiliation>Display Device Lab, Samsung Advanced Institute of Technology, Yongin, 446-712, Republic of Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Display Device Lab, Samsung Advanced Institute of Technology, Yongin, 446-712</wicri:regionArea></affiliation></author><author><name sortKey="Park, Joon Seok" uniqKey="Park J">Joon Seok Park</name></author><author><name sortKey="Jeong, Hyun Kwang" uniqKey="Jeong H">Hyun-Kwang Jeong</name></author><author><name sortKey="Son, Kyoung Seok" uniqKey="Son K">Kyoung Seok Son</name></author><author><name sortKey="Kim, Tae Sang" uniqKey="Kim T">Tae Sang Kim</name></author><author><name sortKey="Seon, Jong Baek" uniqKey="Seon J">Jong-Baek Seon</name></author><author><name sortKey="Lee, Eunha" uniqKey="Lee E">Eunha Lee</name></author><author><name sortKey="Chung, Jae Gwan" uniqKey="Chung J">Jae Gwan Chung</name></author><author><name sortKey="Kim, Dae Hwan" uniqKey="Kim D">Dae Hwan Kim</name></author><author><name sortKey="Ryu, Myungkwan" uniqKey="Ryu M">Myungkwan Ryu</name></author><author><name sortKey="Lee, Sang Yoon" uniqKey="Lee S">Sang Yoon Lee</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1021/am301342x</idno><idno type="RBID">pubmed:22957907</idno><idno type="pmid">22957907</idno><idno type="wicri:Area/Main/Corpus">000A79</idno><idno type="wicri:Area/Main/Curation">000A79</idno><idno type="wicri:Area/Main/Exploration">000F17</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">22957907</PMID><DateCreated><Year>2012</Year><Month>10</Month><Day>24</Day></DateCreated><DateCompleted><Year>2013</Year><Month>03</Month><Day>18</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><Volume>4</Volume><Issue>10</Issue><PubDate><Year>2012</Year><Month>Oct</Month><Day>24</Day></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.</ArticleTitle><Pagination><MedlinePgn>5416-21</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am301342x</ELocationID><Abstract><AbstractText>A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Hyun-Suk</ForeName><Initials>HS</Initials><Affiliation>Display Device Lab, Samsung Advanced Institute of Technology, Yongin, 446-712, Republic of Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Park</LastName><ForeName>Joon Seok</ForeName><Initials>JS</Initials></Author><Author ValidYN="Y"><LastName>Jeong</LastName><ForeName>Hyun-Kwang</ForeName><Initials>HK</Initials></Author><Author ValidYN="Y"><LastName>Son</LastName><ForeName>Kyoung Seok</ForeName><Initials>KS</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Tae Sang</ForeName><Initials>TS</Initials></Author><Author ValidYN="Y"><LastName>Seon</LastName><ForeName>Jong-Baek</ForeName><Initials>JB</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Eunha</ForeName><Initials>E</Initials></Author><Author ValidYN="Y"><LastName>Chung</LastName><ForeName>Jae Gwan</ForeName><Initials>JG</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Dae Hwan</ForeName><Initials>DH</Initials></Author><Author ValidYN="Y"><LastName>Ryu</LastName><ForeName>Myungkwan</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Sang Yoon</ForeName><Initials>SY</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>09</Month><Day>19</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>9</Month><Day>19</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>9</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>9</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>9</Month><Day>11</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am301342x</ArticleId><ArticleId IdType="pubmed">22957907</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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