Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices.
Identifieur interne : 000C25 ( Main/Exploration ); précédent : 000C24; suivant : 000C26Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices.
Auteurs : RBID : pubmed:22166812English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Tin Compounds.
- chemistry : Nanowires.
- ultrastructure : Nanowires.
- Electrodes, Light.
Abstract
Low-temperature growth of indium tin oxide (ITO) nanowires (NWs) was obtained on catalyst-free amorphous glass substrates at 250 °C by Nd:YAG pulsed-laser deposition. These ITO NWs have branching morphology as grown in Ar ambient. As suggested by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM), our ITO NWs have the tendency to grow vertically outward from the substrate surface, with the (400) plane parallel to the longitudinal axis of the nanowires. These NWs are low in electrical resistivity (1.6×10⁻⁴ Ω cm) and high in visible transmittance (~90–96%), and were tested as the electrode for organic light emitting devices (OLEDs). An enhanced current density of ~30 mA cm⁻² was detected at bias voltages of ~19–21 V with uniform and bright emission. We found that the Hall mobility of these NWs is 2.2–2.7 times higher than that of ITO film, which can be explained by the reduction of Coulomb scattering loss. These results suggested that ITO nanowires are promising for applications in optoelectronic devices including OLED, touch screen displays, and photovoltaic solar cells.
DOI: 10.1088/0957-4484/23/2/025706
PubMed: 22166812
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices.</title><author><name sortKey="Kee, Yeh Yee" uniqKey="Kee Y">Yeh Yee Kee</name><affiliation wicri:level="1"><nlm:affiliation>Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor, Malaysia.</nlm:affiliation><country xml:lang="fr">Malaisie</country><wicri:regionArea>Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor</wicri:regionArea></affiliation></author><author><name sortKey="Tan, Sek Sean" uniqKey="Tan S">Sek Sean Tan</name></author><author><name sortKey="Yong, Thian Khok" uniqKey="Yong T">Thian Khok Yong</name></author><author><name sortKey="Nee, Chen Hon" uniqKey="Nee C">Chen Hon Nee</name></author><author><name sortKey="Yap, Seong Shan" uniqKey="Yap S">Seong Shan Yap</name></author><author><name sortKey="Tou, Teck Yong" uniqKey="Tou T">Teck Yong Tou</name></author><author><name sortKey="S Fr N, Gy Rgy" uniqKey="S Fr N G">György Sáfrán</name></author><author><name sortKey="Horv Th, Zsolt Endre" uniqKey="Horv Th Z">Zsolt Endre Horváth</name></author><author><name sortKey="Moscatello, Jason P" uniqKey="Moscatello J">Jason P Moscatello</name></author><author><name sortKey="Yap, Yoke Khin" uniqKey="Yap Y">Yoke Khin Yap</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1088/0957-4484/23/2/025706</idno><idno type="RBID">pubmed:22166812</idno><idno type="pmid">22166812</idno><idno type="wicri:Area/Main/Corpus">001007</idno><idno type="wicri:Area/Main/Curation">001007</idno><idno type="wicri:Area/Main/Exploration">000C25</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electrodes</term><term>Light</term><term>Nanowires (chemistry)</term><term>Nanowires (ultrastructure)</term><term>Tin Compounds (chemistry)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Tin Compounds</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electrodes</term><term>Light</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Low-temperature growth of indium tin oxide (ITO) nanowires (NWs) was obtained on catalyst-free amorphous glass substrates at 250 °C by Nd:YAG pulsed-laser deposition. These ITO NWs have branching morphology as grown in Ar ambient. As suggested by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM), our ITO NWs have the tendency to grow vertically outward from the substrate surface, with the (400) plane parallel to the longitudinal axis of the nanowires. These NWs are low in electrical resistivity (1.6×10⁻⁴ Ω cm) and high in visible transmittance (~90–96%), and were tested as the electrode for organic light emitting devices (OLEDs). An enhanced current density of ~30 mA cm⁻² was detected at bias voltages of ~19–21 V with uniform and bright emission. We found that the Hall mobility of these NWs is 2.2–2.7 times higher than that of ITO film, which can be explained by the reduction of Coulomb scattering loss. These results suggested that ITO nanowires are promising for applications in optoelectronic devices including OLED, touch screen displays, and photovoltaic solar cells.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22166812</PMID><DateCreated><Year>2012</Year><Month>03</Month><Day>01</Day></DateCreated><DateCompleted><Year>2012</Year><Month>05</Month><Day>14</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>23</Volume><Issue>2</Issue><PubDate><Year>2012</Year><Month>Jan</Month><Day>20</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices.</ArticleTitle><Pagination><MedlinePgn>025706</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/23/2/025706</ELocationID><Abstract><AbstractText>Low-temperature growth of indium tin oxide (ITO) nanowires (NWs) was obtained on catalyst-free amorphous glass substrates at 250 °C by Nd:YAG pulsed-laser deposition. These ITO NWs have branching morphology as grown in Ar ambient. As suggested by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM), our ITO NWs have the tendency to grow vertically outward from the substrate surface, with the (400) plane parallel to the longitudinal axis of the nanowires. These NWs are low in electrical resistivity (1.6×10⁻⁴ Ω cm) and high in visible transmittance (~90–96%), and were tested as the electrode for organic light emitting devices (OLEDs). An enhanced current density of ~30 mA cm⁻² was detected at bias voltages of ~19–21 V with uniform and bright emission. We found that the Hall mobility of these NWs is 2.2–2.7 times higher than that of ITO film, which can be explained by the reduction of Coulomb scattering loss. These results suggested that ITO nanowires are promising for applications in optoelectronic devices including OLED, touch screen displays, and photovoltaic solar cells.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kee</LastName><ForeName>Yeh Yee</ForeName><Initials>YY</Initials><Affiliation>Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor, Malaysia.</Affiliation></Author><Author ValidYN="Y"><LastName>Tan</LastName><ForeName>Sek Sean</ForeName><Initials>SS</Initials></Author><Author ValidYN="Y"><LastName>Yong</LastName><ForeName>Thian Khok</ForeName><Initials>TK</Initials></Author><Author ValidYN="Y"><LastName>Nee</LastName><ForeName>Chen Hon</ForeName><Initials>CH</Initials></Author><Author ValidYN="Y"><LastName>Yap</LastName><ForeName>Seong Shan</ForeName><Initials>SS</Initials></Author><Author ValidYN="Y"><LastName>Tou</LastName><ForeName>Teck Yong</ForeName><Initials>TY</Initials></Author><Author ValidYN="Y"><LastName>Sáfrán</LastName><ForeName>György</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Horváth</LastName><ForeName>Zsolt Endre</ForeName><Initials>ZE</Initials></Author><Author ValidYN="Y"><LastName>Moscatello</LastName><ForeName>Jason P</ForeName><Initials>JP</Initials></Author><Author ValidYN="Y"><LastName>Yap</LastName><ForeName>Yoke Khin</ForeName><Initials>YK</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType><PublicationType>Research Support, U.S. Gov't, Non-P.H.S.</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Tin Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>71243-84-0</RegistryNumber><NameOfSubstance>indium tin oxide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Electrodes</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Light</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanowires</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Tin Compounds</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>12</Month><Day>15</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>12</Month><Day>15</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>5</Month><Day>15</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/23/2/025706</ArticleId><ArticleId IdType="pubmed">22166812</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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