IndiumV2, Main, Exploration, bibRecord, 000981

The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.

Identifieur interne : 000981 ( Main/Exploration ); précédent : 000980; suivant : 000982

The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.

Auteurs : RBID : pubmed:22504880

English descriptors

KwdEn :
- Alloys (chemistry), Electrodes, Electronics, Gallium (chemistry), Indium (chemistry), Silver (chemistry).
MESH :
- chemical , chemistry : Alloys, Gallium, Indium, Silver.
- Electrodes, Electronics.

DOI: 10.1002/anie.201201448
PubMed: 22504880

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000D72
to stream Main, to step Curation: 000D72

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.</title>
<author><name sortKey="Yoon, Hyo Jae" uniqKey="Yoon H">Hyo Jae Yoon</name>
<affiliation wicri:level="1"><nlm:affiliation>Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138, USA.</nlm:affiliation>
<country xml:lang="fr">États-Unis</country>
<wicri:regionArea>Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138</wicri:regionArea>
</affiliation>
</author>
<author><name sortKey="Shapiro, Nathan D" uniqKey="Shapiro N">Nathan D Shapiro</name>
</author>
<author><name sortKey="Park, Kyeng Min" uniqKey="Park K">Kyeng Min Park</name>
</author>
<author><name sortKey="Thuo, Martin M" uniqKey="Thuo M">Martin M Thuo</name>
</author>
<author><name sortKey="Soh, Siowling" uniqKey="Soh S">Siowling Soh</name>
</author>
<author><name sortKey="Whitesides, George M" uniqKey="Whitesides G">George M Whitesides</name>
</author>
</titleStmt>
<publicationStmt><date when="2012">2012</date>
<idno type="doi">10.1002/anie.201201448</idno>
<idno type="RBID">pubmed:22504880</idno>
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<idno type="wicri:Area/Main/Exploration">000981</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloys (chemistry)</term>
<term>Electrodes</term>
<term>Electronics</term>
<term>Gallium (chemistry)</term>
<term>Indium (chemistry)</term>
<term>Silver (chemistry)</term>
</keywords>
<keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Alloys</term>
<term>Gallium</term>
<term>Indium</term>
<term>Silver</term>
</keywords>
<keywords scheme="MESH" xml:lang="en"><term>Electrodes</term>
<term>Electronics</term>
</keywords>
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<DateCreated><Year>2012</Year>
<Month>05</Month>
<Day>03</Day>
</DateCreated>
<DateCompleted><Year>2012</Year>
<Month>08</Month>
<Day>29</Day>
</DateCompleted>
<DateRevised><Year>2013</Year>
<Month>11</Month>
<Day>21</Day>
</DateRevised>
<Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1521-3773</ISSN>
<JournalIssue CitedMedium="Internet"><Volume>51</Volume>
<Issue>19</Issue>
<PubDate><Year>2012</Year>
<Month>May</Month>
<Day>7</Day>
</PubDate>
</JournalIssue>
<Title>Angewandte Chemie (International ed. in English)</Title>
<ISOAbbreviation>Angew. Chem. Int. Ed. Engl.</ISOAbbreviation>
</Journal>
<ArticleTitle>The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.</ArticleTitle>
<Pagination><MedlinePgn>4658-61</MedlinePgn>
</Pagination>
<ELocationID EIdType="doi" ValidYN="Y">10.1002/anie.201201448</ELocationID>
<AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Yoon</LastName>
<ForeName>Hyo Jae</ForeName>
<Initials>HJ</Initials>
<Affiliation>Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138, USA.</Affiliation>
</Author>
<Author ValidYN="Y"><LastName>Shapiro</LastName>
<ForeName>Nathan D</ForeName>
<Initials>ND</Initials>
</Author>
<Author ValidYN="Y"><LastName>Park</LastName>
<ForeName>Kyeng Min</ForeName>
<Initials>KM</Initials>
</Author>
<Author ValidYN="Y"><LastName>Thuo</LastName>
<ForeName>Martin M</ForeName>
<Initials>MM</Initials>
</Author>
<Author ValidYN="Y"><LastName>Soh</LastName>
<ForeName>Siowling</ForeName>
<Initials>S</Initials>
</Author>
<Author ValidYN="Y"><LastName>Whitesides</LastName>
<ForeName>George M</ForeName>
<Initials>GM</Initials>
</Author>
</AuthorList>
<Language>eng</Language>
<GrantList CompleteYN="Y"><Grant><GrantID>F32 AI089698</GrantID>
<Acronym>AI</Acronym>
<Agency>NIAID NIH HHS</Agency>
<Country>United States</Country>
</Grant>
</GrantList>
<PublicationTypeList><PublicationType>Journal Article</PublicationType>
<PublicationType>Research Support, N.I.H., Extramural</PublicationType>
<PublicationType>Research Support, U.S. Gov't, Non-P.H.S.</PublicationType>
</PublicationTypeList>
<ArticleDate DateType="Electronic"><Year>2012</Year>
<Month>04</Month>
<Day>13</Day>
</ArticleDate>
</Article>
<MedlineJournalInfo><Country>Germany</Country>
<MedlineTA>Angew Chem Int Ed Engl</MedlineTA>
<NlmUniqueID>0370543</NlmUniqueID>
<ISSNLinking>1433-7851</ISSNLinking>
</MedlineJournalInfo>
<ChemicalList><Chemical><RegistryNumber>0</RegistryNumber>
<NameOfSubstance>Alloys</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>045A6V3VFX</RegistryNumber>
<NameOfSubstance>Indium</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>12024-21-4</RegistryNumber>
<NameOfSubstance>gallium oxide</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>3M4G523W1G</RegistryNumber>
<NameOfSubstance>Silver</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber>
<NameOfSubstance>Gallium</NameOfSubstance>
</Chemical>
</ChemicalList>
<CitationSubset>IM</CitationSubset>
<CommentsCorrectionsList><CommentsCorrections RefType="Cites"><RefSource>J Am Chem Soc. 2007 Mar 21;129(11):3247-56</RefSource>
<PMID Version="1">17315995</PMID>
</CommentsCorrections>
<CommentsCorrections RefType="Cites"><RefSource>Langmuir. 2008 Jun 1;24(13):6910-7</RefSource>
<PMID Version="1">18507407</PMID>
</CommentsCorrections>
<CommentsCorrections RefType="Cites"><RefSource>J Am Chem Soc. 2011 Nov 30;133(47):19168-77</RefSource>
<PMID Version="1">22017204</PMID>
</CommentsCorrections>
<CommentsCorrections RefType="Cites"><RefSource>J Am Chem Soc. 2010 Nov 3;132(43):15427-34</RefSource>
<PMID Version="1">20942407</PMID>
</CommentsCorrections>
<CommentsCorrections RefType="Cites"><RefSource>Adv Mater. 2011 Apr 12;23(14):1583-608</RefSource>
<PMID Version="1">21290434</PMID>
</CommentsCorrections>
<CommentsCorrections RefType="Cites"><RefSource>Nat Nanotechnol. 2006 Dec;1(3):173-81</RefSource>
<PMID Version="1">18654182</PMID>
</CommentsCorrections>
</CommentsCorrectionsList>
<MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Alloys</DescriptorName>
<QualifierName MajorTopicYN="N">chemistry</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Electrodes</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="Y">Electronics</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName>
<QualifierName MajorTopicYN="N">chemistry</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName>
<QualifierName MajorTopicYN="N">chemistry</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Silver</DescriptorName>
<QualifierName MajorTopicYN="N">chemistry</QualifierName>
</MeshHeading>
</MeshHeadingList>
<OtherID Source="NLM">NIHMS416188</OtherID>
<OtherID Source="NLM">PMC3518389</OtherID>
</MedlineCitation>
<PubmedData><History><PubMedPubDate PubStatus="received"><Year>2012</Year>
<Month>2</Month>
<Day>21</Day>
</PubMedPubDate>
<PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year>
<Month>4</Month>
<Day>13</Day>
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<PubMedPubDate PubStatus="entrez"><Year>2012</Year>
<Month>4</Month>
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<Hour>6</Hour>
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<PubMedPubDate PubStatus="medline"><Year>2012</Year>
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</History>
<PublicationStatus>ppublish</PublicationStatus>
<ArticleIdList><ArticleId IdType="doi">10.1002/anie.201201448</ArticleId>
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</record>

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   |étape=   Exploration
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   |texte=   The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.
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Serveur d'exploration sur l'Indium

The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.

The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.

English descriptors

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Pour générer des pages wiki