Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.
Identifieur interne : 000839 ( Main/Exploration ); précédent : 000838; suivant : 000840Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.
Auteurs : RBID : pubmed:23738534Abstract
We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.
DOI: 10.1021/am400943z
PubMed: 23738534
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.</title><author><name sortKey="Kim, Chul Ho" uniqKey="Kim C">Chul Ho Kim</name><affiliation wicri:level="1"><nlm:affiliation>School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Electrical and Electronic Engineering, Yonsei University, Seoul</wicri:regionArea></affiliation></author><author><name sortKey="Rim, You Seung" uniqKey="Rim Y">You Seung Rim</name></author><author><name sortKey="Kim, Hyun Jae" uniqKey="Kim H">Hyun Jae Kim</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1021/am400943z</idno><idno type="RBID">pubmed:23738534</idno><idno type="pmid">23738534</idno><idno type="wicri:Area/Main/Corpus">000597</idno><idno type="wicri:Area/Main/Curation">000597</idno><idno type="wicri:Area/Main/Exploration">000839</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23738534</PMID><DateCreated><Year>2013</Year><Month>07</Month><Day>10</Day></DateCreated><DateCompleted><Year>2013</Year><Month>10</Month><Day>18</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><Volume>5</Volume><Issue>13</Issue><PubDate><Year>2013</Year><Month>Jul</Month><Day>10</Day></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.</ArticleTitle><Pagination><MedlinePgn>6108-12</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am400943z</ELocationID><Abstract><AbstractText>We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Chul Ho</ForeName><Initials>CH</Initials><Affiliation>School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Rim</LastName><ForeName>You Seung</ForeName><Initials>YS</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Hyun Jae</ForeName><Initials>HJ</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>06</Month><Day>18</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>6</Month><Day>18</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>6</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>6</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>6</Month><Day>7</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am400943z</ArticleId><ArticleId IdType="pubmed">23738534</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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