Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.
Identifieur interne : 000791 ( Main/Exploration ); précédent : 000790; suivant : 000792Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.
Auteurs : RBID : pubmed:24266182Abstract
Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays.
PubMed: 24266182
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.</title><author><name sortKey="Lee, Changhun" uniqKey="Lee C">Changhun Lee</name><affiliation wicri:level="1"><nlm:affiliation>Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, 138 Gongreung-Gil, Nowon-Gu, Seoul, 139-743, Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, 138 Gongreung-Gil, Nowon-Gu, Seoul, 139-743</wicri:regionArea></affiliation></author><author><name sortKey="Ko, Yoonduk" uniqKey="Ko Y">Yoonduk Ko</name></author><author><name sortKey="Kim, Youngsung" uniqKey="Kim Y">Youngsung Kim</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="RBID">pubmed:24266182</idno><idno type="pmid">24266182</idno><idno type="wicri:Area/Main/Corpus">000278</idno><idno type="wicri:Area/Main/Curation">000278</idno><idno type="wicri:Area/Main/Exploration">000791</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">24266182</PMID><DateCreated><Year>2013</Year><Month>11</Month><Day>25</Day></DateCreated><DateCompleted><Year>2013</Year><Month>12</Month><Day>18</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Print">1533-4880</ISSN><JournalIssue CitedMedium="Print"><Volume>13</Volume><Issue>12</Issue><PubDate><Year>2013</Year><Month>Dec</Month></PubDate></JournalIssue><Title>Journal of nanoscience and nanotechnology</Title><ISOAbbreviation>J Nanosci Nanotechnol</ISOAbbreviation></Journal><ArticleTitle>Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.</ArticleTitle><Pagination><MedlinePgn>8011-5</MedlinePgn></Pagination><Abstract><AbstractText>Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Changhun</ForeName><Initials>C</Initials><Affiliation>Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, 138 Gongreung-Gil, Nowon-Gu, Seoul, 139-743, Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Ko</LastName><ForeName>Yoonduk</ForeName><Initials>Y</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Youngsung</ForeName><Initials>Y</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>J Nanosci Nanotechnol</MedlineTA><NlmUniqueID>101088195</NlmUniqueID><ISSNLinking>1533-4880</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>11</Month><Day>26</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>11</Month><Day>26</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>11</Month><Day>26</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">24266182</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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